US 12,432,950 B2
Insulated gate bipolar transistor including trench Schottky electrode
Florin Udrea, Cambridge (GB); Marina Antoniou, Cambridge (GB); Neophytos Lophitis, Hinckley (GB); Chiara Corvasce, Bergdietikon (CH); Luca De-Michielis, Aarau (CH); Umamaheswara Vemulapati, Windisch (CH); Uwe Badstuebner, Zurich (CH); and Munaf Rahimo, Gänsbrunnen (CH)
Assigned to Hitachi Energy Ltd, Zürich (CH)
Appl. No. 17/774,555
Filed by Hitachi Energy Ltd, Zürich (CH)
PCT Filed Nov. 6, 2020, PCT No. PCT/EP2020/081331
§ 371(c)(1), (2) Date May 5, 2022,
PCT Pub. No. WO2021/089808, PCT Pub. Date May 14, 2021.
Claims priority of application No. 19208174 (EP), filed on Nov. 8, 2019; and application No. 19210476 (EP), filed on Nov. 20, 2019.
Prior Publication US 2022/0393023 A1, Dec. 8, 2022
Int. Cl. H10D 62/10 (2025.01); H10D 12/00 (2025.01); H10D 62/17 (2025.01); H10D 64/64 (2025.01)
CPC H10D 12/461 (2025.01) [H10D 62/127 (2025.01); H10D 62/393 (2025.01); H10D 64/64 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An insulated gate bipolar transistor comprising:
a source electrode on an emitter side of the insulated gate bipolar transistor;
a collector electrode on a collector side of the insulated gate bipolar transistor, the collector side being opposite the emitter side;
a source layer of a first conductivity type;
a base layer of a second conductivity type, which is different from the first conductivity type, wherein the source layer and the base layer electrically contact the source electrode;
a drift layer of the first conductivity type spaced from the source electrode by the base layer;
a collector layer of the second conductivity type arranged between the drift layer and the collector electrode, the collector layer electrically contacting the collector electrode;
a plurality of trench gate electrodes extending through the base layer into the drift layer, each trench gate electrode of the plurality of trench gate electrodes comprising an electrically conductive gate layer arranged lateral to the base layer and a gate insulating layer that separates the electrically conductive gate layer from any doped layer, wherein a channel is located between the source layer, the base layer and the drift layer and wherein the source layer is arranged at least on one side of each trench gate electrode;
a trench Schottky electrode adjacent to one of the trench gate electrodes, the trench Schottky electrode comprising an electrically conductive Schottky layer arranged lateral to the base layer and extending through the base layer into the drift layer, wherein the electrically conductive Schottky layer is electrically connected to the source electrode and a Schottky insulating layer separates the electrically conductive Schottky layer from the base layer; and
a plurality of collection areas of the second conductivity type located in the drift layer and laterally separated from each other by the drift layer, a bottom portion of each trench gate electrode being adjacent to a respective one of the plurality of collection areas and a bottom portion of the trench Schottky electrode being adjacent to another respective one of the plurality of collection areas, wherein the electrically conductive Schottky layer forms a Schottky contact at a contact area between the bottom portion of the trench Schottky electrode and the another respective one of the plurality of collection areas.