US 12,432,948 B2
Compositional engineering of Schottky diode
Arnab Sen Gupta, Hillsboro, OR (US); Urusa Alaan, Hillsboro, OR (US); Justin Weber, Portland, OR (US); Charles C. Kuo, Union City, CA (US); Yu-Jin Chen, Hillsboro, OR (US); Kaan Oguz, Beaverton, OR (US); Matthew V. Metz, Portland, OR (US); Abhishek A. Sharma, Hillsboro, OR (US); Prashant Majhi, San Jose, CA (US); Brian S. Doyle, Portland, OR (US); and Van H. Le, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 23, 2020, as Appl. No. 17/133,599.
Prior Publication US 2022/0199839 A1, Jun. 23, 2022
Int. Cl. H10D 8/60 (2025.01); H10D 62/86 (2025.01); H10D 64/64 (2025.01); H10D 84/80 (2025.01)
CPC H10D 8/60 (2025.01) [H10D 62/86 (2025.01); H10D 64/64 (2025.01); H10D 84/811 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor layer, wherein transistor devices are provided in the semiconductor layer;
a back end stack over the semiconductor layer; and
a diode in the back end stack, wherein the diode comprises:
a first electrode;
a semiconductor region over the first electrode; and
a second electrode over the semiconductor region, wherein the first electrode and the second electrode have a same composition, wherein a first interface between the first electrode and the semiconductor region is an ohmic contact, and wherein a second interface between the semiconductor region and the second electrode is a Schottky contact, wherein the semiconductor region grades from a composition of SrTiO3 at the first interface to a composition of SrRuO3 at the second interface, wherein the first electrode is part of a first trace extending in a first direction, and the second electrode is part of a second trace extending in a second direction that is substantially orthogonal to the first direction, and wherein the first electrode and the second electrode vertically overlap along the first direction and the second direction from a plan view perspective.