US 12,432,930 B2
Magnetic memory device
Kazuhiro Tomioka, Yokohama Kanagawa (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Sep. 10, 2021, as Appl. No. 17/471,989.
Claims priority of application No. 2021-040512 (JP), filed on Mar. 12, 2021.
Prior Publication US 2022/0293676 A1, Sep. 15, 2022
Int. Cl. H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/00 (2023.02) [H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A magnetic memory device comprising:
a semiconductor substrate;
a bottom electrode provided above the semiconductor substrate;
a stacked structure provided on the bottom electrode, the stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer;
a first sidewall insulating layer provided on a sidewall of the bottom electrode and containing a predetermined element and oxygen (O); and
a second sidewall insulating layer provided on a sidewall of the stacked structure and containing the predetermined element and oxygen (O),
wherein:
the bottom electrode is provided between the semiconductor substrate and the stacked structure,
a bottom surface of the stacked structure has a ring-shaped outer circumference in plan view with a diameter of do,
an upper surface of the first sidewall insulating layer has a ring-shaped outer circumference in plan view with a diameter of d1;
the upper surface of the first sidewall insulating layer has a ring-shaped inner circumference in plan view with a diameter of d2; and
d1>d0>d2.