US 12,432,919 B2
Semiconductor device and method for manufacturing the semiconductor device
Jae Ho Kim, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jun. 16, 2022, as Appl. No. 17/842,259.
Claims priority of application No. 10-2022-0047605 (KR), filed on Apr. 18, 2022.
Prior Publication US 2023/0337427 A1, Oct. 19, 2023
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a stack comprising a first plane edge region, a second plane edge region, and a contact region located between the first plane edge region and the second plane edge region; and
a first insulating structure comprising a first portion located in the first plane edge region of the stack, a second portion located in the second plane edge region of the stack, and a third portion located in the contact region of the stack, wherein the first portion comprises a first curved edge.