US 12,432,913 B2
Semiconductor memory device
Dae Sung Eom, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jun. 9, 2022, as Appl. No. 17/836,748.
Claims priority of application No. 10-2022-0000523 (KR), filed on Jan. 3, 2022.
Prior Publication US 2023/0217651 A1, Jul. 6, 2023
Int. Cl. H10B 41/27 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/40 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01)
CPC H10B 41/27 (2023.02) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/40 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a semiconductor substrate including a first region and a second region;
a memory cell array over the first region of the semiconductor substrate;
a dummy stack structure over the second region of the semiconductor substrate;
a chip guard structure penetrating the dummy stack structure; and
a void-containing structure penetrating the dummy stack structure,
wherein the dummy stack structure extends to surround opposite sidewalls of the void-containing structure.