	US 12,432,907 B2
	Semiconductor device and semiconductor memory device
Akifumi Gawase, Kuwana Mie (JP); and Shuntaro Yamashita, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 3, 2023, as Appl. No. 18/178,474.
Claims priority of application No. 2022-099891 (JP), filed on Jun. 21, 2022.
Prior Publication US 2023/0413530 A1, Dec. 21, 2023
Int. Cl. H10B 12/00 (2023.01); H10D 30/63 (2025.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01)

CPC H10B 12/33 (2023.02) [H10B 12/05 (2023.02)]

30 Claims

1. A semiconductor device, comprising:

a first electrode comprising a metal oxide;

a second electrode comprising a metal oxide;

an oxide semiconductor layer between the first electrode and the second electrode in a first direction;

a gate electrode surrounding the oxide semiconductor layer in a second direction intersecting the first direction;

a gate insulating layer between the gate electrode and the oxide semiconductor layer and comprising silicon and nitrogen;

a first insulating layer between the first electrode and the gate electrode in the first direction;

a second insulating layer between the second electrode and the gate electrode in the first direction;

a first conductive layer in contact with a surface of the first electrode opposite to the oxide semiconductor layer and comprising a metal, a metal nitride, or a metal carbide;

a second conductive layer in contact with a surface of the second electrode opposite to the oxide semiconductor layer and comprising a metal, a metal nitride, or a metal carbide;

a first layer surrounding the first electrode in the second direction, the first layer being in contact with the first conductive layer, the first layer comprising at least one insulator selected from a group consisting of aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, silicon oxynitride, and aluminum oxynitride or at least one conductor selected from a group consisting of metal, metal nitride, and metal carbide;

a second layer surrounding the second electrode in the second direction, the second layer being in contact with the second conductive layer and comprising at least one insulator selected from a group consisting of aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, silicon oxynitride, and aluminum oxynitride or at least one conductor selected from a group consisting of a metal, a metal nitride, and a metal carbide;

a third insulating layer between the first electrode and the first insulating layer, the third insulating layer being in contact with the gate insulating layer and the first layer and comprising at least one insulator selected from a group consisting of aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, silicon oxynitride, and aluminum oxynitride; and

a fourth insulating layer between the second electrode and the second insulating layer, the fourth insulating layer being in contact with the gate insulating layer and the second layer and comprising at least one insulator selected from a group consisting of aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, silicon oxynitride, and aluminum oxynitride.

11. A semiconductor device, comprising:

a first electrode comprising a metal oxide;

a second electrode comprising a metal oxide;

an oxide semiconductor layer between the first electrode and the second electrode in a first direction;

a gate electrode surrounding the oxide semiconductor layer in a second direction intersecting the first direction;

a gate insulating layer between the gate electrode and the oxide semiconductor layer and comprising silicon and nitrogen;

a first insulating layer between the first electrode and the gate electrode in the first direction;

a second insulating layer, the gate electrode being between the first insulating layer and the second insulating layer in the first direction;

a first conductive layer in contact with a surface of the first electrode opposite to the oxide semiconductor layer and comprising at least one of a metal, a metal nitride, or a metal carbide;

a second conductive layer in contact with a surface of the second electrode opposite to the oxide semiconductor layer, the second conductive layer being surrounded by the second electrode in the second direction and comprising at least one of a metal, a metal nitride, or a metal carbide;

a metal layer surrounded by the second conductive layer in the second direction;

a first layer surrounding the first electrode in the second direction, the first layer being in contact with the first conductive layer and comprising at least one insulator selected from a group consisting of aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, silicon oxynitride, and aluminum oxynitride or at least one conductor selected from a group consisting of a metal, a metal nitride, and a metal carbide;

a third insulating layer between the first electrode and the first insulating layer in the first direction, the third insulating layer being in contact with the gate insulating layer and the first layer and comprising at least one insulator selected from a group consisting of aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, silicon oxynitride, and aluminum oxynitride; and

a fourth insulating surrounding the metal layer in the second direction, the fourth insulating layer being in contact with the second conductive layer and the gate insulating layer and comprising at least one insulator selected from a group consisting of aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, silicon oxynitride, and aluminum oxynitride.

21. A semiconductor device, comprising:

a first electrode comprising a metal oxide;

a second electrode comprising a metal oxide;

an oxide semiconductor layer between the first electrode and the second electrode in a first direction;

a gate electrode surrounding the oxide semiconductor layer;

a gate insulating layer between the gate electrode and the oxide semiconductor layer, the gate insulating layer surrounding the second electrode in a second direction intersecting the first direction and comprising silicon and nitrogen;

a first insulating layer between the first electrode and the gate electrode;

a second insulating layer, the gate electrode being between the first insulating layer and the second insulating layer;

a first conductive layer in contact with a surface of the first electrode opposite to the oxide semiconductor layer and being at least one of a metal, a metal nitride, or a metal carbide;

a second conductive layer in contact with a surface of the second electrode opposite to the oxide semiconductor layer, the second conductive layer being in contact with the gate insulating layer, the second insulating layer being between the gate electrode and the second conductive layer, and the second conductive layer being at least one of a metal, a metal nitride, or a metal carbide;