| CPC H04N 25/77 (2023.01) [H04N 25/779 (2023.01); H04N 25/7795 (2023.01); H10F 39/182 (2025.01); H10F 39/8037 (2025.01)] | 19 Claims |

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1. A solid-state imaging device, comprising:
a first substrate that includes a pixel array unit, wherein
the pixel array unit includes a plurality of pixels,
the plurality of pixels includes a plurality of photoelectric conversion units,
each of the plurality of pixels corresponds to a respective photoelectric conversion unit of the plurality of photoelectric conversion units, and
the first substrate includes:
a plurality of first wirings, wherein
each of the plurality of first wirings is configured to transmit a first imaging pixel signal,
the first imaging pixel signal is read from a first set of at least two pixels,
the first set of at least two pixels is in a first direction in the pixel array unit, and
the plurality of pixels includes the first set of at least two pixels;
a plurality of second wirings that corresponds to the plurality of first wirings, wherein each of the plurality of second wirings is configured to transmit a reset voltage to initialize each of the plurality of the first wirings;
a first switching circuit configured to switch whether or not to short-circuit a first wiring of the plurality of first wirings and a second wiring of the plurality of second wirings;
a plurality of third wirings that corresponds to the plurality of first wirings and the plurality of second wirings, wherein the plurality of third wirings is set at a reference voltage; and
a plurality of second switching circuits configured to switch whether or not to short-circuit the plurality of second wirings and the plurality of third wirings that corresponds to the plurality of second wirings.
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