| CPC H04N 25/70 (2023.01) [H04N 25/134 (2023.01); H04N 25/534 (2023.01); H04N 25/583 (2023.01); H04N 25/778 (2023.01); H04N 25/78 (2023.01); H04N 25/79 (2023.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/8053 (2025.01); H10F 39/809 (2025.01); H10F 39/813 (2025.01); H10F 39/8063 (2025.01)] | 20 Claims |

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1. An imaging sensor comprising:
a first semiconductor substrate that includes:
a first photoelectric conversion unit that converts, into electrical charges, light transmitted through a first filter having a first spectral characteristic; and
a second photoelectric conversion unit that converts, into electrical charges, light transmitted through a second filter having a second spectral characteristic, the second photoelectric conversion unit being arranged in a row direction side by side with the first photoelectric conversion unit;
a second semiconductor substrate that includes
a drive unit that performs a control such that an accumulation period of accumulating the electrical charges converted in the first photoelectric conversion unit is different from an accumulation period of accumulating the electrical charges converted in the second photoelectric conversion unit, the second semiconductor substrate being stacked with the first semiconductor substrate; and
a plurality of bonding units that electrically connect the first semiconductor substrate and the second semiconductor substrate, the plurality of bonding units having conductive components arranged facing each other in a stack direction in which the first semiconductor substrate and the second semiconductor substrate are stacked.
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