US 12,431,930 B2
Power mixer, radio frequency circuit, device and equipment
Jie Su, Chongqing (CN); Yizhe Xu, Chongqing (CN); and Yong Zhu, Chongqing (CN)
Assigned to CHANGQING BARROT TECHNOLOGY LIMITED, Chongqing (CN)
Appl. No. 17/909,439
Filed by CHONGQING BARROT TECHNOLOGY LIMITED, Chongqing (CN)
PCT Filed Dec. 31, 2020, PCT No. PCT/CN2020/142275
§ 371(c)(1), (2) Date Sep. 6, 2022,
PCT Pub. No. WO2021/174993, PCT Pub. Date Sep. 10, 2021.
Claims priority of application No. 202010151051.X (CN), filed on Mar. 6, 2020.
Prior Publication US 2023/0155619 A1, May 18, 2023
Int. Cl. H04B 1/30 (2006.01); H03D 7/16 (2006.01); H04B 1/40 (2015.01)
CPC H04B 1/30 (2013.01) [H03D 7/16 (2013.01); H04B 1/40 (2013.01); H04B 2001/307 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A power mixer, comprising:
a mixer module, which amplifies an analog baseband current signal by a silicon germanium heterojunction bipolar transistor amplifying circuit, and converts a local oscillator voltage signal into a local oscillator current signal by a silicon germanium heterojunction bipolar transistor switching circuit, wherein the silicon germanium heterojunction bipolar transistor switching circuit receives the amplified analog baseband current signal, and mixes the amplified analog baseband current signal and the local oscillator current signal into a radio frequency current signal; and
a transformer module, which converts the radio frequency current signal into a radio frequency power signal and then outputs the radio frequency power signal from the power mixer, wherein the silicon germanium heterojunction bipolar transistor amplifying circuit is composed of two identical units, and the two units of the silicon germanium heterojunction bipolar transistor amplifying circuit process a I signal and a Q signal respectively, each of the units of the silicon germanium heterojunction bipolar transistor amplifying circuit includes:
eight silicon germanium heterojunction bipolar transistors arranged in parallel, wherein a base terminal of each of the eight silicon germanium heterojunction bipolar transistors is connected in series with a first resistor and a second resistor, and the other terminal of the second resistor is connected with one bias voltage input terminal, a first connection point is set between the first resistor and the second resistor, the eight first connection points are interconnected to each other and connected to one pole of a first capacitor, the other pole of the first capacitor is connected an input terminal of the analog baseband current signal, emitter terminals of the eight silicon germanium heterojunction bipolar transistors are connected to each other, and collector terminals of the eight silicon germanium heterojunction bipolar transistors are connected to each other to form two baseband current signal output lines, which are connected to the silicon germanium heterojunction bipolar transistor switching circuit; and
a ninth silicon germanium heterojunction bipolar transistor, which has a collector connected to the emitter terminals of the eight silicon germanium heterojunction bipolar transistors, an emitter grounded, and a base connected to a third resistor, wherein the other terminal of the third resistors is connected to a bias voltage input terminal.