US 12,431,627 B2
Millimeter wave filter array
David Bates, Cazenovia, NY (US)
Assigned to KNOWLES CAZENOVIA, INC., Cazenovia, NY (US)
Filed by Knowles Cazenovia, Inc., Cazenovia, NY (US)
Filed on Jul. 12, 2019, as Appl. No. 16/510,786.
Claims priority of provisional application 62/697,558, filed on Jul. 13, 2018.
Prior Publication US 2020/0021004 A1, Jan. 16, 2020
Int. Cl. H01Q 9/04 (2006.01); H01P 1/208 (2006.01); H01P 11/00 (2006.01); H01Q 13/18 (2006.01); H01Q 13/28 (2006.01); H01Q 15/00 (2006.01)
CPC H01Q 9/0485 (2013.01) [H01P 1/2084 (2013.01); H01P 1/2088 (2013.01); H01P 11/007 (2013.01); H01P 11/008 (2013.01); H01Q 13/18 (2013.01); H01Q 13/28 (2013.01); H01Q 15/0053 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for forming a radio frequency device, the method comprising:
irradiating, with laser energy, at least one first three-dimensional structure in a first optically transparent dielectric layer;
etching the at least one first three-dimensional structure to form at least one first three-dimensional cavity structure extending at least partially between a first surface and a second surface of the first optically transparent dielectric layer;
depositing metal in the at least one first three-dimensional cavity structure to form a first at least partially closed conductive structure extending at least partially between the first surface and the second surface of the first optically transparent dielectric layer;
depositing a metal layer on the first surface of the first optically transparent dielectric layer without extending the metal layer into the first optically transparent dielectric layer; and
forming a first radio frequency input-output (RF I/O) contact and a first ground plane on the first surface of the first optically transparent dielectric layer from the metal layer, the first ground plane spaced apart from, and located about, a perimeter of the first RF I/O contact, wherein the first at least partially closed conductive structure together with the first ground plane at least partially provides a first resonant space in the first optically transparent dielectric layer, the first RF I/O contact not extending into the first optically transparent dielectric layer.