US 12,431,444 B2
Package structure having trench capacitor
Fu-Chiang Kuo, Hsinchu (TW); and Jen-Yuan Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 11, 2022, as Appl. No. 17/862,267.
Claims priority of provisional application 63/222,459, filed on Jul. 16, 2021.
Claims priority of provisional application 63/220,431, filed on Jul. 9, 2021.
Prior Publication US 2023/0010825 A1, Jan. 12, 2023
Int. Cl. H01L 23/64 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01)
CPC H01L 23/642 (2013.01) [H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 25/0652 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/3512 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a semiconductor substrate having first trenches and second trenches therein, wherein the first trenches are separate trenches and arranged in parallel in a first arrangement direction with each first trench extending in a first extension direction, the second trenches are separate trenches and arranged in parallel in a second arrangement direction with each second trench extending in a second extension direction, the first extension direction is intersected with the second extension direction, and the first arrangement direction is intersected with the second arrangement direction with an angle between the first arrangement direction and the second arrangement direction being an oblique angle;
a first trench capacitor disposed in the first trenches and on the semiconductor substrate, wherein the first trench capacitor includes first capacitor segments disposed inside the first trenches and extending inside the semiconductor substrate in the first extension direction; and
a second trench capacitor disposed in the second trenches and on the semiconductor substrate, wherein the second trench capacitor includes second capacitor segments disposed inside the second trenches and extending inside the semiconductor substrate in the second extension direction,
wherein one first capacitor segment of the first capacitor segments has an extending length different from that of another first capacitor segment of the first capacitor segments, and one second capacitor segment of the second capacitor segments has an extending length different from that of another second capacitor segment of the second capacitor segments.