US 12,431,438 B2
Semiconductor device and method for partial EMI shielding
JinHee Jung, Incheon (KR); and ChangOh Kim, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Aug. 19, 2022, as Appl. No. 17/820,957.
Prior Publication US 2024/0063137 A1, Feb. 22, 2024
Int. Cl. H01L 23/552 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/16 (2023.01)
CPC H01L 23/552 (2013.01) [H01L 21/4817 (2013.01); H01L 21/4853 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 24/16 (2013.01); H01L 25/162 (2013.01); H01L 25/165 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/16151 (2013.01); H01L 2924/1616 (2013.01); H01L 2924/3025 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical component over the substrate;
depositing an encapsulant over the electrical component;
disposing a vertical interconnect structure in the encapsulant;
forming a shielding layer over the encapsulant and vertical interconnect structure;
forming a groove in the shielding layer around the vertical interconnect structure, wherein a portion of the shielding layer remains over the vertical interconnect structure as a contact pad;
mounting a semiconductor package to the shielding layer using an adhesive standoff with a spring pin of the semiconductor package contacting the contact pad.