| CPC H01L 23/4824 (2013.01) [H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 64/257 (2025.01); H10D 89/611 (2025.01)] | 14 Claims |
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1. A semiconductor device comprising:
a substrate;
a first nitride semiconductor layer which is disposed on the substrate;
a second nitride semiconductor layer which is disposed on the first nitride semiconductor layer;
a source electrode which is disposed on the second nitride semiconductor layer, the source electrode being finger-shaped;
a drain electrode which is disposed on the second nitride semiconductor layer apart from the source electrode, the drain electrode being finger-shaped;
a gate electrode which is disposed between the source electrode and the drain electrode, the gate electrode being finger-shaped;
a drain pad;
a drain lead wire;
a plurality of source pads;
a source lead wire;
a source collective wire which extends in a first direction that is perpendicular to a lengthwise direction of the gate electrode in a plan view of the substrate;
a gate pad;
a first gate collective wire which extends in the first direction;
a plurality of second gate collective wires; and
a third gate collective wire which extends in the first direction,
wherein the drain electrode is electrically connected to the drain pad via the drain lead wire,
the source electrode is electrically connected to the plurality of source pads via the source lead wire and the source collective wire,
the gate electrode is electrically connected to the gate pad, which is positioned at one end or each of ends of the third gate collective wire, via the first gate collective wire, the plurality of second gate collective wires, and the third gate collective wire, and
the plurality of source pads and the plurality of second gate collective wires are alternately disposed in the first direction.
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