US 12,431,406 B2
Bonded body, circuit board, semiconductor device, and method for manufacturing bonded body
Seiichi Suenaga, Yokohama (JP); Maki Yonetsu, Mitaka (JP); and Sachiko Fujisawa, Kawasaki (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA MATERIALS CO., LTD., Yokohama (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA MATERIALS CO., LTD., Yokohama (JP)
Filed on Dec. 27, 2022, as Appl. No. 18/146,626.
Application 18/146,626 is a continuation of application No. PCT/JP2021/026928, filed on Jul. 19, 2021.
Claims priority of application No. 2020-126589 (JP), filed on Jul. 27, 2020.
Prior Publication US 2023/0135530 A1, May 4, 2023
Int. Cl. H01L 23/15 (2006.01); C04B 37/02 (2006.01); H01L 23/373 (2006.01); H05K 1/03 (2006.01)
CPC H01L 23/3735 (2013.01) [C04B 37/025 (2013.01); H01L 23/15 (2013.01); H05K 1/0306 (2013.01); C04B 2237/366 (2013.01); C04B 2237/368 (2013.01); C04B 2237/407 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A bonded body comprising:
a ceramic substrate;
a copper plate; and
a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate,
the bonding layer containing Cu, Ti, and a first element being one or two selected from Sn and In,
the bonding layer being free of Ag,
the bonding layer including
a Ti-rich region in which a ratio (MTi/ME1) of a mass MTi of Ti to a mass ME1 of the first element being not less than 0.5, and
a Ti-poor region in which the ratio (MTi/ME1) being not more than 0.1.