| CPC H01L 23/3675 (2013.01) [H01L 21/4882 (2013.01); H01L 23/49816 (2013.01); H01L 23/552 (2013.01); H01L 25/162 (2013.01); H01L 25/165 (2013.01); H01L 23/49833 (2013.01); H01L 23/5385 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/1611 (2013.01); H01L 2924/1616 (2013.01); H01L 2924/16235 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/1631 (2013.01); H01L 2924/16315 (2013.01); H01L 2924/1632 (2013.01)] | 29 Claims |

|
1. A method of making a semiconductor device, comprising:
disposing a semiconductor package over a substrate;
disposing an embedded bar (e-bar) substrate on the substrate around the semiconductor package with a height of the e-bar substrate above the substrate being less than a height of the semiconductor package above the substrate; and
forming a heat sink over the semiconductor package and supported by the e-bar substrate to elevate the heat sink from the substrate.
|