US 12,431,401 B2
Semiconductor device
Keiichi Furuya, Tokyo (JP)
Assigned to RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed by RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed on Sep. 14, 2022, as Appl. No. 17/944,678.
Claims priority of application No. 2021-159353 (JP), filed on Sep. 29, 2021.
Prior Publication US 2023/0099677 A1, Mar. 30, 2023
Int. Cl. H01L 21/31 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/3171 (2013.01) [H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 24/05 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05124 (2013.01); H01L 2924/3512 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate having a first main surface and a second main surface that is an opposite surface of the first main surface;
a plurality of wirings which are layered over the first main surface in a thickness direction that is a direction extending from the second main surface to the first main surface; and
a passivation film which covers a top wiring that is a wiring being at a farthest position from the first main surface in the thickness direction, of the plurality of wirings,
wherein the top wiring has a first linear portion linearly extending along a first direction from a termination portion of the top wiring in plan view,
wherein the passivation film has a first dummy opening formed therein, the first dummy opening penetrating the passivation film in the thickness direction,
wherein the first dummy opening is disposed so as to be spaced apart from the termination portion and overlap with an end portion of the first linear portion on the termination portion side, in plan view,
wherein the semiconductor device further comprises a polyimide film disposed over the passivation film, and
wherein the first dummy opening is filled with the polyimide film.