US 12,431,396 B2
Temperature correction information calculation device, semiconductor manufacturing apparatus, storage medium, and temperature correction information calculation method
Tatsuya Watanabe, Yamanashi (JP); and Yuichi Takenaga, Yamanashi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 31, 2022, as Appl. No. 17/828,487.
Claims priority of application No. 2021-096159 (JP), filed on Jun. 8, 2021.
Prior Publication US 2022/0392814 A1, Dec. 8, 2022
Int. Cl. H01L 21/66 (2006.01); H01L 21/67 (2006.01)
CPC H01L 22/26 (2013.01) [H01L 21/67098 (2013.01); H01L 21/67253 (2013.01); H01L 22/12 (2013.01)] 13 Claims
OG exemplary drawing
 
12. A temperature correction information calculation method of a semiconductor manufacturing apparatus, the method comprising:
obtaining a film forming result from a heat treatment performed on a processing target object at a set temperature corrected according to a cumulative film thickness that is accumulated on an inner wall of the semiconductor manufacturing apparatus;
determining whether or not to update a model for generating temperature correction information in which a temperature correction value is associated with the cumulative film thickness based on whether there is an external disturbance in the film forming result obtained by the heat treatment at the obtaining;
updating the model based on the film forming result on the processing target object when determined to update the model at the determining; and
generating the temperature correction information using the model updated at the updating.