US 12,431,395 B2
Semiconductor power module with crack sensing
Charles Rimbert-Riviere, Soest (DE); and Arne Eilers, Soest (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Nov. 21, 2022, as Appl. No. 17/990,960.
Prior Publication US 2024/0170347 A1, May 23, 2024
Int. Cl. H01L 21/66 (2006.01); H01L 21/48 (2006.01); H01L 23/24 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01)
CPC H01L 22/20 (2013.01) [H01L 21/4846 (2013.01); H01L 22/12 (2013.01); H01L 22/32 (2013.01); H01L 23/24 (2013.01); H01L 23/3735 (2013.01); H01L 23/49811 (2013.01); H01L 24/48 (2013.01); H01L 2224/48225 (2013.01); H01L 2924/153 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of producing a power semiconductor module, the method comprising:
providing a power electronics carrier that comprises a structured metallization layer disposed on an electrically insulating substrate layer;
performing a production step of the power semiconductor module using the power electronics carrier;
using a sensor to obtain crack information during the production step, the crack information comprising information about whether one or more cracks occurred in the electrically insulating substrate layer during the production step;
analyzing the crack information; and
performing one or more of the following after analyzing the crack information:
performing a subsequent production step of the power semiconductor module dependent upon the analyzed crack information;
cataloging the analyzed crack information; and
performing a further investigative step to inspect the electrically insulating substrate layer using the analyzed crack information.