| CPC H01L 21/76834 (2013.01) [H01L 21/02063 (2013.01); H01L 21/76846 (2013.01); H01L 21/76861 (2013.01); H01L 21/76877 (2013.01); B05D 1/32 (2013.01); H01L 21/28562 (2013.01); H01L 2221/1063 (2013.01)] | 9 Claims |

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1. A method of self-assembled monolayer (SAM) formation comprising:
exposing a substrate with an exposed metallic surface and an exposed non-metallic surface to a first precursor comprising phenanthroline or a phenanthroline derivative, and
depositing the self-assembled monolayer (SAM) on the exposed metallic surface, the SAM selectively forming on the metallic surface over the non-metallic surface.
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