US 12,431,386 B2
Semiconductor device having metallization layer with low capacitance and method for manufacturing the same
Cheng-Chin Lee, Hsinchu (TW); Ting-Ya Lo, Hsinchu (TW); Chi-Lin Teng, Hsinchu (TW); Cherng-Shiaw Tsai, Hsinchu (TW); Shao-Kuan Lee, Hsinchu (TW); Kuang-Wei Yang, Hsinchu (TW); Gary Liu, Hsinchu (TW); Hsin-Yen Huang, Hsinchu (TW); Hsiao-Kang Chang, Hsinchu (TW); and Shau-Lin Shue, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 5, 2024, as Appl. No. 18/764,971.
Application 18/764,971 is a division of application No. 17/674,064, filed on Feb. 17, 2022, granted, now 12,062,572.
Prior Publication US 2024/0363400 A1, Oct. 31, 2024
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01)
CPC H01L 21/7682 (2013.01) [H01L 23/5329 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a patterned conductive layer disposed over the substrate, and including a first conductive feature and a second conductive feature spaced apart from each other;
a first liner covering an upper portion of a lateral surface of the first conductive feature;
a second liner covering an upper portion of a lateral surface of the second conductive feature facing the lateral surface of the first conductive feature; and
a sustaining cover disposed to interconnect the first liner and the second liner so as to form an air gap confined by the first conductive feature, the second conductive feature, the first liner, the second liner, and the sustaining cover,
wherein
a lower portion of the lateral surface of the first conductive feature is exposed to the air gap; and
a lower portion of the lateral surface of the second conductive feature is exposed to the air gap.