| CPC H01L 21/6833 (2013.01) [C04B 35/575 (2013.01); C04B 35/645 (2013.01); C04B 37/008 (2013.01); C04B 37/028 (2013.01); C22C 29/065 (2013.01); C04B 2235/3891 (2013.01); C04B 2235/402 (2013.01); C04B 2235/656 (2013.01); C04B 2237/365 (2013.01); C04B 2237/402 (2013.01)] | 8 Claims |

|
5. A method of manufacturing an electrostatic chuck comprising an upper plate made of ceramic and having a wafer seated therein, a lower plate bonded to the upper plate, and an adhesive for bonding the upper plate and the lower plate together,
wherein the lower plate is manufactured by:
a first step of preparing first powder comprising at least one of aluminum, stainless steel, titanium, and magnesium;
a second step of preparing second powder comprising at least one of silicon-carbide (SiC), silicon nitride (Si3N4), silicon, diamond, carbon nanotubes, and graphene;
a third step of mixing the first powder and the second powder; and
a fourth step of producing a molding body of the lower plate by sintering and molding the mixed powder at a high temperature under vacuum and pressurization, and
a ratio of the first powder and the second powder that are mixed in the third step is 4:6 to 6:4,
wherein a ratio of a particle size of the first powder and the second powder is 1:0.05 to 1:0.4, and
wherein a coefficient of thermal expansion of the lower plate is 12*10−6/K to 13*10−6/K.
|