US 12,431,373 B2
Temperature correction information calculating device, semiconductor manufacturing apparatus, recording medium, and temperature correction information calculating method
Tatsuya Watanabe, Yamanashi (JP); and Yuichi Takenaga, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 8, 2022, as Appl. No. 17/805,952.
Claims priority of application No. 2021-101015 (JP), filed on Jun. 17, 2021.
Prior Publication US 2022/0406631 A1, Dec. 22, 2022
Int. Cl. H01L 21/67 (2006.01)
CPC H01L 21/67248 (2013.01) [H01L 21/67103 (2013.01); H01L 21/67253 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A system comprising:
a semiconductor manufacturing apparatus; and
a temperature correction information calculating device for use with the semiconductor manufacturing apparatus,
the semiconductor manufacturing apparatus including:
a first memory; and
a first processor coupled to the first memory and configured to
correct a preset temperature in accordance with an accumulated film thickness on an inner wall of the semiconductor manufacturing apparatus,
control a temperature by using a heater such that the temperature approaches the corrected preset temperature in the semiconductor manufacturing apparatus, and
perform a deposition process on an object, and
the temperature correction information calculating device including:
a second memory; and
a second processor coupled to the second memory and configured to
store a temperature correction value for correcting the preset temperature,
obtain first heater power applied to the heater, the first heater power being included in log information that is generated when the deposition process is performed,
predict second heater power by adding, to the first heater power, a first variation of heater power due to a preset temperature change and a second variation of heater power due to an accumulated film thickness change, and
correct the temperature correction value based on the predicted second heater power, wherein
the second processor is further configured to calculate the second variation of the heater power due to the accumulated film thickness change by using a model, in which a temperature variation is associated with a film thickness variation, and using an accumulated film thickness versus power table in which an accumulated film thickness variation is associated with a heater power variation.