US 12,431,368 B2
Semiconductor heat treatment device and method for controlling pressure in process chamber
Yan Jia, Beijing (CN); Dan Geng, Beijing (CN); and Zhimin Chen, Beijing (CN)
Assigned to BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Appl. No. 18/686,651
Filed by BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
PCT Filed Aug. 22, 2022, PCT No. PCT/CN2022/113832
§ 371(c)(1), (2) Date Feb. 26, 2024,
PCT Pub. No. WO2023/025076, PCT Pub. Date Mar. 2, 2023.
Claims priority of application No. 202110998436.4 (CN), filed on Aug. 27, 2021.
Prior Publication US 2024/0355646 A1, Oct. 24, 2024
Int. Cl. H01L 21/67 (2006.01); G05D 16/16 (2006.01)
CPC H01L 21/67017 (2013.01) [G05D 16/16 (2013.01); H01L 21/67098 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of controlling a pressure in a process chamber of a semiconductor heat treatment device, comprising:
obtaining an actual pressure value in the process chamber;
determining a first valve opening value for controlling opening of an exhaust valve according to a difference between the actual pressure value and a preset target pressure value;
determining a first valve opening change value according to the first valve opening value and a current valve opening value;
determining whether the first valve opening change value is within a preset fluctuation range of a valve opening change value corresponding to a current process stage; and
in response to the first valve opening change value being within the fluctuation range, adjusting the opening of the exhaust valve according to the first valve opening value.