US 12,431,366 B2
Structure having thermal dissipation structure therein and manufacturing method thereof
Chen-Hua Yu, Hsinchu (TW); Yian-Liang Kuo, Hsinchu (TW); and Kuo-Chung Yee, Taoyuan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 14, 2024, as Appl. No. 18/442,033.
Application 18/442,033 is a continuation of application No. 17/460,321, filed on Aug. 30, 2021, granted, now 11,935,760.
Prior Publication US 2024/0258122 A1, Aug. 1, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H01L 23/64 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 23/373 (2006.01)
CPC H01L 21/561 (2013.01) [H01L 21/486 (2013.01); H01L 21/563 (2013.01); H01L 21/76898 (2013.01); H01L 23/3114 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5383 (2013.01); H01L 23/642 (2013.01); H01L 24/05 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/367 (2013.01); H01L 23/3735 (2013.01); H01L 2224/023 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05552 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06589 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a first thermal dissipation structure, comprising:
a semiconductor substrate;
conductive vias embedded in the semiconductor substrate;
a thermal transmission structure disposed over the semiconductor substrate and the conductive vias, wherein the thermal transmission structure comprises a conductive plane;
first capacitors, at least partially embedded in the thermal transmission structure; and
bonding pads and bonding vias embedded in the thermal transmission structure, wherein the bonding vias electrically connect the conductive vias and the bonding pads, and the conductive plane is in physical contact with sidewalls of at least one of the bonding pads.