US 12,431,355 B2
Method and system for forming patterned features on a surface of a substrate using a plasma-enhanced cyclical deposition process
Seunghyun Lee, Tokyo (JP); Yeahyun Gu, Hwaseong-si (KR); Hyunchul Kim, Hwaseong-si (KR); and Naoki Inoue, Tokyo (JP)
Assigned to ASM IP Holding B. V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Aug. 30, 2021, as Appl. No. 17/460,673.
Claims priority of provisional application 63/073,586, filed on Sep. 2, 2020.
Prior Publication US 2022/0068647 A1, Mar. 3, 2022
Int. Cl. H01L 21/033 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/0338 (2013.01) [C23C 16/4554 (2013.01); H01J 37/32449 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01J 2237/332 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming patterned features on a surface of a substrate, the method comprising the steps of:
using a plasma-enhanced cyclical deposition process, forming a transformable layer comprising a first material on the surface of the substrate, the first material comprising one or more of silicon oxygen carbon nitride (comprising silicon, oxygen, carbon, and nitrogen), silicon oxygen carbide (comprising silicon, oxygen, and carbon), metal carbide (comprising a metal and carbon), or metal carbon nitride (comprising metal, carbon, and nitrogen);
exposing the transformable layer to energy to form a second material in a first region of the transformable layer exposed to the energy and a second region of the transformable layer not exposed to the energy comprising the first material; and
wherein the plasma-enhanced cyclical deposition process is performed within a reaction chamber and comprises continually providing a reactant during one or more deposition cycles to the reaction chamber,
wherein the reactant comprises a nitrogen-containing compound, and
wherein an etch rate of the first material is different than an etch rate of the second material.