	US 12,431,351 B2
	Method of forming germanium antimony tellurium film
Donggeon Gu, Hwaseong-si (KR); Won-Jun Lee, Seoul (KR); Changyup Park, Hwaseong-si (KR); Dongho Ahn, Hwaseong-si (KR); Yewon Kim, Seoul (KR); Kwonyoung Kim, Seoul (KR); and Okhyeon Kim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and Industry Academy Cooperation Foundation Of Sejong University, Seoul (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 10, 2023, as Appl. No. 18/095,243.
Claims priority of application No. 10-2022-0007474 (KR), filed on Jan. 18, 2022.
Prior Publication US 2023/0230832 A1, Jul. 20, 2023
Int. Cl. H01L 21/02 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H10B 63/00 (2023.01); H10B 63/10 (2023.01)

CPC H01L 21/02568 (2013.01) [C23C 16/06 (2013.01); C23C 16/45527 (2013.01); C23C 16/56 (2013.01); H01L 21/02614 (2013.01); H01L 21/0262 (2013.01); H10B 63/10 (2023.02); H10B 63/84 (2023.02)]

20 Claims

1. A method of forming a germanium antimony tellurium (GeSbTe) layer, the method comprising:

forming a germanium antimony (GeSb) layer by repeatedly performing a GeSb supercycle; and

forming the GeSbTe layer by performing a tellurization operation on the GeSb layer,

wherein:

performing the GeSb supercycle includes:

performing at least one GeSb cycle; and

performing at least one Sb cycle,

wherein in performing the at least one GeSb cycle, Ge atoms and Sb atoms are supplied concurrently; and

GeSbTe of the GeSbTe layer has a composition of Ge₂Sb_2+aTe_5+b, in which a and b satisfy the following relations: −0.2<a<0.2 and −0.5<b<0.5.