US 12,431,350 B2
Seed layer, a heterostructure comprising the seed layer and a method of forming a layer of material using the seed layer
Barbaros Oezyilmaz, Singapore (SG); Chee Tat Toh, Singapore (SG); and Irfan Haider Abidi, Singapore (SG)
Assigned to National University of Singapore, Singapore (SG)
Appl. No. 17/910,180
Filed by National University of Singapore, Singapore (SG)
PCT Filed Mar. 9, 2021, PCT No. PCT/SG2021/050118
§ 371(c)(1), (2) Date Sep. 8, 2022,
PCT Pub. No. WO2021/183050, PCT Pub. Date Sep. 16, 2021.
Claims priority of application No. 10202002196X (SG), filed on Mar. 10, 2020.
Prior Publication US 2023/0154747 A1, May 18, 2023
Int. Cl. H01L 21/02 (2006.01); C01B 32/05 (2017.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01); C23C 16/48 (2006.01)
CPC H01L 21/02444 (2013.01) [C01B 32/05 (2017.08); C23C 16/0272 (2013.01); C23C 16/26 (2013.01); C23C 16/4418 (2013.01); C23C 16/483 (2013.01); H01L 21/02499 (2013.01); H01L 21/0262 (2013.01); C01P 2002/02 (2013.01); C01P 2002/77 (2013.01); C01P 2002/82 (2013.01); C01P 2004/04 (2013.01); C01P 2006/40 (2013.01); C01P 2006/60 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02387 (2013.01); H01L 21/024 (2013.01); H01L 21/0242 (2013.01); H01L 21/02422 (2013.01); H01L 21/0254 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02557 (2013.01); H01L 21/02562 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A seed layer for inducing nucleation to form a layer of material on a substrate, the seed layer comprising a layer of two-dimensional (2D) monolayer amorphous material having a disordered atomic structure, the disordered atomic structure generating a strained 2D lattice of the layer of 2D monolayer amorphous material and resulting in an atomic rearrangement of the layer of 2D monolayer amorphous material in three-dimensional (3D) space to create localised electronic states to form electric potential wells for bonding adatoms to a surface of the seed layer via van der Waals (vdW) interaction, wherein the layer of 2D monolayer amorphous material comprises a homogenous 2D monolayer amorphous carbon, and wherein the seed layer further comprises one or more additional layers of 2D monolayer amorphous carbon deposited directly on the layer of 2D monolayer amorphous material to form a multilayer structure of the seed layer to tune the vdW interaction between the seed layer and the layer of material and to remotely modulate an interaction between the substrate and the adatoms for forming the layer of material during growth.