US 12,431,348 B2
Method for producing a crystalline oxide semiconductor film and a gallium oxide film, and a method for producing a vertical semiconductor device
Takenori Watabe, Annaka (JP); and Hiroshi Hashigami, Annaka (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Appl. No. 17/795,092
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
PCT Filed Dec. 17, 2020, PCT No. PCT/JP2020/047079
§ 371(c)(1), (2) Date Jul. 25, 2022,
PCT Pub. No. WO2021/157215, PCT Pub. Date Aug. 12, 2021.
Claims priority of application No. 2020-018915 (JP), filed on Feb. 6, 2020; and application No. 2020-136430 (JP), filed on Aug. 12, 2020.
Prior Publication US 2023/0089169 A1, Mar. 23, 2023
Int. Cl. H01L 21/02 (2006.01); C30B 25/18 (2006.01)
CPC H01L 21/02172 (2013.01) [C30B 25/18 (2013.01); H01L 21/02271 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for producing a gallium oxide film, wherein, to a substance in which an ferric oxide layer and a gallium oxide layer are formed in this order by a mist CVD method on the surface of a substrate having a single crystal structure, light is irradiated from the gallium oxide layer side to cause separation between the gallium oxide layer and the substrate at the ferric oxide layer, and the gallium oxide film is produced by the separation of the gallium oxide layer.