US 12,431,340 B2
Exhaust gas processing apparatus having plasma source and substrate processing apparatus including the same
Jaehyun Kim, Suwon-si (KR); Kookjin Ann, Suwon-si (KR); Suji Gim, Suwon-si (KR); Taijong Sung, Suwon-si (KR); Sunwoo Yook, Suwon-si (KR); and Young Heo, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 20, 2023, as Appl. No. 18/390,956.
Claims priority of application No. 10-2023-0007816 (KR), filed on Jan. 19, 2023.
Prior Publication US 2024/0249925 A1, Jul. 25, 2024
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32844 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32623 (2013.01); H01J 37/32899 (2013.01); H01J 2237/327 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An exhaust gas processing apparatus, comprising:
a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump;
at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump;
a first plasma source connected to the first chamber and the second chamber, the first plasma source being configured to generate a first treatment material; and
a second plasma source connected to the first chamber and the second chamber, the second plasma source being configured to generate a second treatment material different from the first treatment material.