| CPC H01J 37/32697 (2013.01) [H01J 37/32724 (2013.01); H01L 21/6833 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/20235 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3327 (2013.01)] | 18 Claims |

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1. A method of de-chucking a substrate disposed in a process chamber, comprising:
processing a substrate in a chamber body, the substrate being coupled to a substrate support comprising a chucking electrode;
monitoring a property associated with a lift pin assembly movable relative to the chucking electrode via an actuator;
adjusting a first voltage level applied to the chucking electrode in response to the property associated with the lift pin assembly satisfying one or more criteria; and
monitoring a second voltage level associated with a heater element of the substrate support, wherein adjusting the first voltage level comprises adjusting the first voltage level based at least in part on the second voltage level.
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