US 12,431,338 B2
Composite structures for semiconductor process chambers
Tianshu Li, Santa Clara, CA (US); Yikai Chen, Santa Clara, CA (US); Aniruddha Pal, Santa Clara, CA (US); Yao-Hung Yang, Santa Clara, CA (US); and Saurabh M. Chaudhari, Santa Clara, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 3, 2023, as Appl. No. 18/386,721.
Prior Publication US 2025/0149305 A1, May 8, 2025
Int. Cl. H01J 37/32 (2006.01); C23C 16/32 (2006.01)
CPC H01J 37/32642 (2013.01) [C23C 16/325 (2013.01); H01J 37/32477 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for forming a part for a process chamber, comprising:
performing a silicon carbide (SiC) deposition process on a substrate to form a SiC coating on all sides of the substrate to form a composite SiC structure, wherein the substrate is composed of a stack of a plurality of substrates; and
separating the stack of the plurality of substrates of the composite SiC structure to form multiple composite structures, wherein each of the multiple composite structures has the SiC coating on a top surface and on side surfaces and has a bottom surface of exposed substrate material.