US 12,431,336 B2
Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
Masaru Kadoshima, Toyama (JP); and Atsushi Sano, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Sep. 30, 2022, as Appl. No. 17/957,290.
Claims priority of application No. PCT/JP2022/015578 (WO), filed on Mar. 29, 2022.
Prior Publication US 2023/0317420 A1, Oct. 5, 2023
Int. Cl. H01J 37/32 (2006.01); G05D 21/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC H01J 37/32449 (2013.01) [G05D 21/00 (2013.01); H01J 37/32834 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
a) supplying a first gas to the substrate on which a film is formed and forming a modified layer on a surface of the film;
b) after a), supplying a second gas to the modified layer and removing the modified layer;
c) after b), supplying an inert gas having a first temperature higher than a processing temperature of b) to the film;
d) after c), supplying an inert gas having a second temperature that is lower than the first temperature to the film; and
e) removing a portion of the film by performing a), b), c) and (d) sequentially a predetermined number of times.