US 12,431,335 B2
Substrate processing method and substrate processing apparatus
Yuta Nakane, Miyagi (JP); Sho Kumakura, Miyagi (JP); and Shinya Ishikawa, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Mar. 22, 2022, as Appl. No. 17/701,497.
Claims priority of application No. 2021-046890 (JP), filed on Mar. 22, 2021.
Prior Publication US 2022/0384151 A1, Dec. 1, 2022
Int. Cl. C23F 4/00 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01)
CPC H01J 37/32449 (2013.01) [C23F 4/00 (2013.01); H01J 37/32082 (2013.01); H01J 37/32862 (2013.01); H01J 2237/3346 (2013.01); H01J 2237/335 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A substrate processing method comprising steps of:
providing a substrate including a metal compound film and a mask defining an opening on the metal compound film to a plasma processing chamber; and
etching the metal compound film by forming a plasma from a first processing gas including BCl3 gas and H2 gas, a ratio of volume of the H2 gas to a total volume of the BCl3 gas and H2 gas being from 10% to 15%,
wherein the metal compound film is formed from an oxide, nitride, silicate, or oxynitride of Hf, Ta, Ti, Al, Y, La, W, Mo, Ni, Ru, or Co, and
wherein the metal compound film includes Al2O3 or HfO2.