US 12,431,332 B2
High energy implanter with small footprint
Wilhelm Platow, Newburyport, MA (US); Shu Satoh, Byfield, MA (US); and Neil Bassom, Hamilton, MA (US)
Assigned to Axcelis Technologies, Inc., Beverly, MA (US)
Filed by Axcelis Technologies, Inc., Beverly, MA (US)
Filed on Sep. 26, 2023, as Appl. No. 18/474,402.
Prior Publication US 2025/0104965 A1, Mar. 27, 2025
Int. Cl. H01J 37/147 (2006.01); C23C 14/48 (2006.01); H01J 37/317 (2006.01)
CPC H01J 37/3171 (2013.01) [C23C 14/48 (2013.01); H01J 37/147 (2013.01); H01J 2237/0473 (2013.01); H01J 2237/05 (2013.01); H01J 2237/1508 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A high-energy ion implantation system comprising:
an ion source configured to form an ion beam along a beam path;
a mass analyzer configured to mass analyze the ion beam along the beam path;
a first linear accelerator configured to receive the ion beam at a first accelerator entrance thereof from the mass analyzer and to accelerate the ion beam to a first accelerator exit along the beam path;
a second linear accelerator configured to receive the ion beam at a second accelerator entrance thereof and to accelerate the ion beam to a second accelerator exit along the beam path;
a first magnet disposed between the first accelerator exit and the second accelerator entrance along the beam path, wherein the first magnet is configured to alter a trajectory of the beam path by greater than 90° along a first plane;
a beam shaping apparatus having a beam shaping entrance and a beam shaping exit along the beam path, wherein the beam shaping apparatus is configured to define a shape of the ion beam along the beam path; and
a second magnet disposed between the second accelerator exit and the beam shaping entrance along the beam path, wherein the second magnet is configured to alter the trajectory of the beam path by greater than 90° along a second plane, wherein the first plane and the second plane are not coplanar.