| CPC H01J 37/3171 (2013.01) [H01J 37/16 (2013.01); H01J 37/18 (2013.01); H01J 37/20 (2013.01); H01J 2237/202 (2013.01)] | 9 Claims |
|
1. A material surface reforming apparatus using ion implantation, comprising:
a vacuum chamber unit that has an internal space in which vacuum is selectively maintained, and has a station for placing a material that is a surface reforming target in the internal space;
a first ion implanter that is mounted at the upper portion of the vacuum chamber unit, creates plasma composed of ionized gas particles or metal particles, and emits a first ion beam toward the material placed on the station by applying a voltage to the created plasma;
a second ion implanter that is mounted at the upper portion of the vacuum chamber unit, creates plasma composed of ionized gas particles or metal particles, and emits a second ion beam toward the material placed on the station by applying a voltage to the created plasma; and
a controller that controls operation of the first ion implanter and the second ion implanter such that a complex compound layer including an electric conductive layer is formed while ions are implanted into the surface of the material by emitting both of the first ion beam and the second ion beam or only one ion beam of the first ion beam and the second ion beam,
wherein first ion implanter and the second ion implanter are spaced apart from each other and mounted at positions that are point-symmetric to each other at the upper portion of the vacuum chamber unit.
|