| CPC G11C 29/52 (2013.01) [G11C 16/08 (2013.01); G11C 16/28 (2013.01); G11C 16/3404 (2013.01)] | 20 Claims |
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1. A system comprising:
a memory device comprising a plurality of memory cells; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
identifying, among a plurality of wordlines on the memory device, a group of wordlines, wherein each wordline of the group of wordlines is connected to a respective subset of memory cells;
assigning, to the group of wordlines, a specified charge loss classification value characterizing a shift of a threshold voltage distribution;
selecting a page level of a page level hierarchy, wherein the page level comprises a set of memory cell charge states;
selecting a first set of memory cells comprising one or more memory cells having their respective charge states corresponding to the page level;
determining, for the first set of memory cells, an aggregate value of a first data state metric;
responsive to determining that the aggregate value of the first data state metric satisfies a first criterion, identifying, among the first set of memory cells, a second set of memory cells charged to a specified charge state within the page level;
determining, for the second set of memory cells, an aggregate value of a second data state metric based on one or more distributions of individual values of the second data state metric;
maintaining a skew counter of skewed distributions of the second data state metric;
identifying a read reference voltage offset associated with the specified charge state;
updating the read reference voltage offset based on the value of the skew counter; and
applying the updated read reference voltage offset in a read operation performed on the memory cells connected to the group of wordlines.
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