US 12,431,205 B2
Adaptive calibration for threshold voltage offset bins
Vamsi Pavan Rayaprolu, Santa Clara, CA (US); and Steven Michael Kientz, Westminster, CO (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed on May 31, 2023, as Appl. No. 18/204,189.
Claims priority of provisional application 63/347,836, filed on Jun. 1, 2022.
Prior Publication US 2023/0395170 A1, Dec. 7, 2023
Int. Cl. G11C 16/34 (2006.01)
CPC G11C 16/3495 (2013.01) 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
determining whether a program erase cycle count associated with a segment of the memory device satisfies a first threshold criterion for triggering an offset bin update;
responsive to determining that the program erase cycle count satisfies the first threshold criterion, performing a calibration measurement of a center of a voltage valley for each state of each cell in the segment of the memory device;
repeating the calibration until a result of the calibration measurement is less than or equal to a threshold value; and
updating a threshold voltage offset bin associated with the segment of the memory device based on the result of the calibration measurement.