US 12,431,178 B2
Low-voltage sense amplifier for reading a state-programmable memory element
Stefano Sivero, Comun Nuovo (IT); Alessandro Palludo, Milan (IT); and Fabio Tassan Caser, Dresden (DE)
Assigned to Ferroelectric Memory GmbH, Dresden (DE)
Filed by Ferroelectric Memory GmbH, Dresden (DE)
Filed on Oct. 13, 2023, as Appl. No. 18/486,206.
Prior Publication US 2025/0124961 A1, Apr. 17, 2025
Int. Cl. G11C 11/22 (2006.01); G06F 3/06 (2006.01)
CPC G11C 11/2273 (2013.01) [G06F 3/0625 (2013.01); G06F 3/0634 (2013.01); G06F 3/0673 (2013.01); G11C 11/221 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A sense amplifier comprising a plurality of transistors connected in a cascode configuration, the plurality of transistors configured to:
sense, in a read operation mode for reading from a state-programmable memory element, a switching signal from the state-programmable memory element;
apply, in a write operation mode for writing to the state-programmable memory element, a programming voltage level to the state-programmable memory element;
receive a supply voltage at, in the read operation mode, a first supply voltage level that is lower than the programming voltage level and at, in the write operation mode, the programming voltage level; and
operate in the read operation mode and the write operation mode with no more than a maximum operational voltage level across each of the plurality of transistors that is less than the programming voltage level.