US 12,431,170 B2
Memory system performing performance adjusting operation
Duksoo Kim, Seoul (KR); Daesung Cheon, Hwaseong-si (KR); and Doil Kong, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 6, 2022, as Appl. No. 17/858,374.
Claims priority of application No. 10-2021-0114252 (KR), filed on Aug. 27, 2021.
Prior Publication US 2023/0063640 A1, Mar. 2, 2023
Int. Cl. G11C 7/00 (2006.01); G11C 7/04 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01)
CPC G11C 7/04 (2013.01) [G11C 7/1084 (2013.01); G11C 7/109 (2013.01); G11C 7/227 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system comprising:
a substrate;
a first memory package mounted on the substrate and including a plurality of first non-volatile memories (NVMs);
a second memory package mounted on the substrate and including a plurality of second NVMs; and
a memory controller configured to,
acquire a temperature of the substrate from a temperature sensor,
increase performance of at least one of the plurality of first NVMs, the plurality of first NVMs having a first heat dissipation efficiency, and lower performance of at least one of the plurality of second NVMs, the plurality of second NVMs having a second heat dissipation efficiency lower than the first heat dissipation efficiency, during a same time period, based on the acquired temperature of the substrate and a first temperature threshold level, and
decrease the performance of the at least one of the plurality of first NVMs and the at least one of the plurality of second NVMs in response to the temperature of the substrate exceeding a second temperature threshold level greater than the first temperature threshold level.