| CPC G01N 1/38 (2013.01) [G01N 33/0045 (2013.01); G01N 2001/383 (2013.01); G01N 2001/386 (2013.01)] | 7 Claims |

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1. A semiconductor low-temperature elemental mercury generator, comprising:
a gas source, communicated with a carrier gas pipeline and a dilution gas pipeline, and
a mercury pool generating chamber, wherein the mercury pool generating chamber comprises a semiconductor refrigeration device, a gas mixing device and a coil, wherein the coil is kept at a constant temperature through the semiconductor refrigeration device, the carrier gas pipeline is communicated with the coil, and the gas mixing device is communicated with a gas outlet of the coil and the dilution gas pipeline;
wherein the mercury pool generating chamber is provided with an annular groove, the coil is located in the annular groove, and heat conducting liquid is filled between the coil and the groove;
the mercury pool generating chamber is made of metal material with good thermal conductivity;
the coil comprises an inlet section, a mercury source section and an outlet section, wherein quartz sand is filled in the inlet section and the outlet section, and quartz sand with mercury beads is filled in the mercury source section;
a surface of the quartz sand in the mercury source section is coated with a gold film.
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