| CPC C30B 15/26 (2013.01) [C30B 15/16 (2013.01); C30B 29/06 (2013.01)] | 15 Claims |

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1. A crystal-growth controlling method, a cross section of at least part of grown crystal having a predetermined shape, wherein the crystal-growth controlling method comprises:
in a process of growing a crystal by a pulling method, acquiring a growth image of the crystal in real time, and extracting shape information of the crystal at a growth interface from the growth image, wherein the growth interface is where the crystal intersects with a raw-material melt liquid level;
comparing the shape information of the crystal at the growth interface with shape information of the predetermined shape, to obtain a comparison result; and
based on the comparison result, adjusting a shape of the crystal at the growth interface by using a laser;
wherein in the process of growing the crystal by the pulling method, the crystal rotates in a first direction relatively to the raw-material melt, and when the shape of the crystal at the growth interface is adjusted by using the laser, a laser light emitted by the laser irradiates the growth interface of the crystal;
wherein in the process of growing the crystal by the pulling method, the crystal has a first contour at the growth interface;
the predetermined shape has a second contour; and
the step of, based on the comparison result, adjusting the shape of the crystal at the growth interface by using the laser comprises:
based on the comparison result, controlling the laser to irradiate the growth interface of the crystal in a laser-light movement path, to adjust the shape of the crystal at the growth interface by using the laser, wherein the laser-light movement path is between the first contour and the second contour in a radial direction of the crystal at the growth interface.
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