US 12,101,067 B2
Semiconductor device
Minato Ito, Kanagawa (JP); Hitoshi Kunitake, Kanagawa (JP); and Takayuki Ikeda, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Appl. No. 17/614,690
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed May 22, 2020, PCT No. PCT/IB2020/054867
§ 371(c)(1), (2) Date Nov. 29, 2021,
PCT Pub. No. WO2020/245693, PCT Pub. Date Dec. 10, 2020.
Claims priority of application No. 2019-106670 (JP), filed on Jun. 7, 2019.
Prior Publication US 2022/0231644 A1, Jul. 21, 2022
Int. Cl. H03F 3/45 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01)
CPC H03F 3/45475 (2013.01) [H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01); H10B 12/00 (2023.02); H03F 2203/45594 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an operational amplifier between an input terminal of a phase shifter and an output terminal of the phase shifter;
a transistor electrically connected to a first input terminal of the operational amplifier;
a first resistor electrically connected to a second input terminal of the operational amplifier; and
a second resistor electrically connected to the second input terminal of the operational amplifier,
wherein a gate of the transistor is electrically connected to a first terminal,
wherein one of a source and a drain of the transistor is electrically connected to the input terminal of the phase shifter,
wherein the other of the source and the drain of the transistor is electrically connected to the first input terminal of the operational amplifier,
wherein the first resistor is electrically connected to the input terminal of the phase shifter,
wherein the second resistor is electrically connected to the output terminal of the phase shifter, and
wherein at least a transistor included in the operational amplifier comprises a region overlapping with the transistor.