US 12,101,066 B2
Compact architecture for multipath low noise amplifier
Jonathan James Klaren, San Diego, CA (US)
Assigned to pSemi Corporation, San Diego, CA (US)
Filed by pSemi Corporation, San Diego, CA (US)
Filed on Dec. 21, 2022, as Appl. No. 18/086,436.
Application 18/086,436 is a continuation of application No. 17/200,858, filed on Mar. 14, 2021, granted, now 11,539,334.
Application 17/200,858 is a continuation of application No. PCT/US2019/051142, filed on Sep. 13, 2019.
Application PCT/US2019/051142 is a continuation of application No. 16/135,965, filed on Sep. 19, 2018, abandoned.
Prior Publication US 2023/0208365 A1, Jun. 29, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H03F 3/19 (2006.01); H03F 3/195 (2006.01); H03F 3/68 (2006.01); H04B 1/16 (2006.01)
CPC H03F 3/195 (2013.01) [H03F 3/68 (2013.01); H04B 1/16 (2013.01); H03F 2200/213 (2013.01); H03F 2200/216 (2013.01); H03F 2200/294 (2013.01); H03F 2200/429 (2013.01); H03F 2200/451 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A radio frequency (RF) amplifier comprising:
a first amplifying element comprising one or more first transistors in a cascode configuration, and a first variable capacitor coupled across gate and source of a first transistor of the one or more first transistors;
a first variable inductor coupling the first transistor of the one or more first transistors to a common ground node;
a second amplifying element connectable to a plurality of output loads,
wherein the first amplifying element comprises an N-type metal-oxide-semiconductor (NMOS) and the second amplifying element comprises a P-type metal-oxide-semiconductor (PMOS); and
wherein the RF amplifier is configured to:
receive an input RF signal;
amplify the input RF signal using a combination of the first amplifying element and the second amplifying element to generate an amplified RF signal; and
feed the amplified RF signal, simultaneously, to the plurality of output loads.