CPC H01L 29/788 (2013.01) [G11C 16/14 (2013.01); H01L 29/66825 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02)] | 20 Claims |
1. A semiconductor device comprising:
a body;
a first terminal, coupled to the body, comprising:
a tunneling oxide layer,
a first gate, and
a first dielectric layer;
a second terminal, coupled to the body, comprising:
a second gate formed directly on the body; and
a second dielectric layer formed between the first gate and the second gate.
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