US 11,769,807 B2
Lateral transistor with extended source finger contact
Woochul Jeon, Phoenix, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Oct. 1, 2020, as Appl. No. 16/948,788.
Claims priority of provisional application 62/706,134, filed on Aug. 3, 2020.
Prior Publication US 2022/0037485 A1, Feb. 3, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01)
CPC H01L 29/41758 (2013.01) [H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/2003 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a plurality of source fingers in a first plane;
a source pad in a second plane and connected to the plurality of source fingers;
a plurality of drain fingers in the first plane and interdigitated with the plurality of source fingers;
a drain pad in the second plane and connected to the plurality of drain fingers;
a gate pad connected to a gate and to a gate feed that extends at least partially around the source pad and the drain pad; and
an extended source finger contact in the second plane and connected to the source pad and to a source finger of the plurality of source fingers, and extending in parallel with the source finger and at least partially around the drain pad.