US 11,769,724 B2
Package having different metal densities in different regions and manufacturing method thereof
Hsien-Wei Chen, Hsinchu (TW); Jie Chen, New Taipei (TW); Ming-Fa Chen, Taichung (TW); and Sen-Bor Jan, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 2, 2022, as Appl. No. 17/684,431.
Application 17/684,431 is a continuation of application No. 16/929,118, filed on Jul. 15, 2020, granted, now 11,309,243.
Claims priority of provisional application 62/892,558, filed on Aug. 28, 2019.
Prior Publication US 2022/0246524 A1, Aug. 4, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01)
CPC H01L 23/5227 (2013.01) [H01L 21/56 (2013.01); H01L 23/3107 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/20 (2013.01); H01L 2224/03011 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package having a first region and a second region surrounded by the first region, comprising:
a first die, extending from the first region to the second region;
a second die bonded to the first die, wherein the second die is located within a span of the first die;
an encapsulant aside the second die, wherein at least a portion of the encapsulant is located in the second region; and
an inductor located in the second region and laterally having an offset from the second die, wherein a metal density in the first region is greater than a metal density in the second region.