US 11,769,657 B2
Dual tapped inductor boost topology for digital control of an excimer lamp
Eric Johannessen, Holbrook, NY (US); and Jeremy Fredrich, West Allis, WI (US)
Assigned to B/E AEROSPACE, INC., Winston Salem, NC (US)
Filed by B/E AEROSPACE, INC., Winston Salem, NC (US)
Filed on Jul. 9, 2021, as Appl. No. 17/371,574.
Prior Publication US 2023/0010506 A1, Jan. 12, 2023
Int. Cl. H05B 41/14 (2006.01); H01J 65/04 (2006.01)
CPC H01J 65/042 (2013.01) [H05B 41/14 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A system for powering an excimer bulb, the system comprising:
a first inductor configured to be coupled to a first terminal of the excimer bulb;
a first transistor coupled to the first inductor and having an on state configured to allow current to flow through the first inductor and an off state;
a second transistor configured to be coupled to the first terminal of the excimer bulb and having an on state configured to allow current to flow through the excimer bulb and an off state;
a first resistor coupled between the first transistor and an electrical ground;
a second resistor coupled between the second transistor and the electrical ground;
a second inductor configured to be coupled to a second terminal of the excimer bulb;
a third transistor coupled to the second inductor and having an on state configured to allow current to flow through the second inductor and an off state;
a fourth transistor configured to be coupled to the second terminal of the excimer bulb and having an on state configured to allow current to flow through the excimer bulb and an off state; and
a controller coupled to the first transistor, the second transistor, the third transistor, and the fourth transistor to control operation of at least one of the first transistor, the second transistor, the third transistor, and the fourth transistor to power the excimer bulb;
wherein the controller is further coupled to the first resistor and the second resistor and is further configured to control operation of the first transistor and the second transistor based on electrical properties detected at the first resistor and the second resistor.