US 11,769,546 B2
Nonvolatile memory device, system including the same and method for fabricating the same
Kohji Kanamori, Seongnam-si (KR); Sang Youn Jo, Suwon-si (KR); and Jee Hoon Han, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 2, 2021, as Appl. No. 17/465,539.
Claims priority of application No. 10-2020-0125996 (KR), filed on Sep. 28, 2020.
Prior Publication US 2022/0101911 A1, Mar. 31, 2022
Int. Cl. G11C 7/10 (2006.01); G11C 11/4093 (2006.01); H10B 12/00 (2023.01)
CPC G11C 11/4093 (2013.01) [H10B 12/50 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A nonvolatile memory device, comprising
a first lower interlayer insulation layer and a second lower interlayer insulation layer that are sequentially stacked in a first direction;
a lower metal layer disposed in the first lower interlayer insulation layer; and
a plurality of lower bonding metals disposed in the first lower interlayer insulation layer and the second lower interlayer insulation layer and spaced apart from each other in a second direction that intersects the first direction,
wherein an uppermost surface in the first direction of the lower metal layer is lower than an uppermost surface in the first direction of the plurality of lower bonding metals, and
the lower metal layer is placed between the plurality of lower bonding metals,
a bottom surface in the first direction of the lower metal layer and a bottom surface in the first direction of the plurality of lower bonding metals are substantially coplanar, and
an upper surface in the first direction of the lower metal layer is disposed below an upper surface in the first direction of the plurality of lower bonding metals.