US 11,768,432 B2
Reflective mask and method for manufacturing a semiconductor device using the same
Sang-Ho Yun, Yongin-si (KR); Soo Kyung Kim, Seongnam-si (KR); Jaikyun Park, Hwaseong-si (KR); Donghoon Lee, Gwacheon-si (KR); Rankyung Jung, Seoul (KR); and Soonmok Ha, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 20, 2021, as Appl. No. 17/407,425.
Claims priority of application No. 10-2020-0121771 (KR), filed on Sep. 21, 2020.
Prior Publication US 2022/0091497 A1, Mar. 24, 2022
Int. Cl. G03F 1/24 (2012.01); H01L 21/027 (2006.01)
CPC G03F 1/24 (2013.01) [H01L 21/0274 (2013.01)] 20 Claims
 
1. A reflective mask, comprising:
a central region; and
a first peripheral region and a second peripheral region at opposite sides of the central region, respectively,
wherein the first peripheral region includes:
a first out-of-band region having:
a first edge region extending in a first direction, and
a first expansion region between the first edge region and the central region, and
a first outer auxiliary region adjacent to the first expansion region of the first out-of-band region in the first direction, the first outer auxiliary region having a first auxiliary pattern region.