US 11,768,086 B2
Method for forming a sensor circuit
Franz Jost, Stuttgart (DE); Harald Witschnig, Landskron (AT); and Juergen Zimmer, Neubiberg (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jun. 28, 2019, as Appl. No. 16/456,905.
Application 16/456,905 is a division of application No. 14/976,348, filed on Dec. 21, 2015, granted, now 10,337,888.
Claims priority of application No. 102014119531.0 (DE), filed on Dec. 23, 2014.
Prior Publication US 2019/0316935 A1, Oct. 17, 2019
Int. Cl. G01D 5/16 (2006.01); G01R 33/09 (2006.01); G01R 33/00 (2006.01); G01D 3/08 (2006.01); H10B 61/00 (2023.01); H10N 59/00 (2023.01); H10N 50/00 (2023.01)
CPC G01D 5/16 (2013.01) [G01D 3/08 (2013.01); G01R 33/0052 (2013.01); G01R 33/09 (2013.01); H10B 61/00 (2023.02); H10N 50/00 (2023.02); H10N 59/00 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A method for forming a sensor circuit, the method comprising:
forming a plurality of magnetoresistive structures having a first predefined reference magnetization direction in a first common area of a common semiconductor substrate, wherein the forming the plurality of magnetoresistive structures having the first predefined reference magnetization direction comprises laser treatment of the first common area during a first time interval;
forming a plurality of magnetoresistive structures having a second predefined reference magnetization direction in a second common area of the common semiconductor substrate, wherein the forming the plurality of magnetoresistive structures having the second predefined reference magnetization direction comprises laser treatment of the second common area during a subsequent second time interval; and
forming electrically conductive structures electrically coupling the magnetoresistive structures having the first predefined reference magnetization direction to the magnetoresistive structures having the second predefined reference magnetization direction to form a plurality of half-bridge sensor circuits, wherein each half-bridge sensor circuit comprises a magnetoresistive structure having the first predefined reference magnetization direction electrically coupled to a second magnetoresistive structure having the second predefined reference magnetization direction.